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Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

✍ Scribed by Cole, M. W.; Joshi, P. C.; Hubbard, C. W.; Wood, M. C.; Ervin, M. H.; Geil, B.; Ren, F.


Book ID
111909217
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
780 KB
Volume
88
Category
Article
ISSN
0021-8979

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We investigated titanium based ohmic contacts using co-evaporated epitaxial titanium carbide (TiC) on highly 1 1 doped n -and p -type epilayers as well as Al ion implanted layers for high power and high temperature device application. Epitaxially grown TiC ohmic contacts on epilayers as well as Al i