𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication and characterization of pulse laser deposited Ni2Si Ohmic contacts on n-SiC for high power and high temperature device applications

✍ Scribed by Cole, M. W.; Joshi, P. C.; Ervin, M.


Book ID
111909927
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
752 KB
Volume
89
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Low resistivity ohmic contacts on 4H-sil
✍ S.-K Lee; C.-M Zetterling; M Γ–stling; J.-P Palmquist; U Jansson πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 233 KB

We investigated titanium based ohmic contacts using co-evaporated epitaxial titanium carbide (TiC) on highly 1 1 doped n -and p -type epilayers as well as Al ion implanted layers for high power and high temperature device application. Epitaxially grown TiC ohmic contacts on epilayers as well as Al i

Fabrication and nonlinear characterizati
✍ V. Camarchia; S. Donati Guerrieri; M. Pirola; V. Teppati; A. Ferrero; G. Ghione; πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 329 KB

In this work, we present the characterization results for several HEMT GaNbased devices developed by SELEX Sistemi Integrati. Due to the wide band-gap properties of this material, these devices are very well-suited for high-power applications, and must be characterized under strongly nonlinear and h