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Improved empirical DC I–V model for 4H-SiC MESFETs

✍ Scribed by QuanJun Cao; YiMen Zhang; YuMing Zhang; HongLiang Lv; YueHu Wang; XiaoYan Tang; Hui Guo

Book ID
107357308
Publisher
Science in China Press (SCP)
Year
2008
Tongue
English
Weight
625 KB
Volume
51
Category
Article
ISSN
1674-733X

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An improved small-signal equivalent circ
An improved small-signal equivalent circuit model for 4H-SIC power mesfets
✍ Yuehang Xu; Yunchuan Guo; Ruimin Xu; Bo Yan; Yunqiu Wu 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 327 KB

## Abstract The frequency‐dependence of parasitic resistances (R~s~ and R~d~) for 4H‐SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small‐signal equivalent circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed