✦ LIBER ✦

Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model

✍ Scribed by Hongliang Lv; Yimen Zhang; Yuming Zhang; Lin-An Yang

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of electron mobility modeling

✍ Polyakov, V.M.; Schwierz, F. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 121 KB

Quantum modelling of I – V characteristi

✍ Blasciuc-Dimitriu, C; Horsfall, A B; Wright, N G; Johnson, C M; Vassilevski, K V 📂 Article 📅 2004 🏛 Institute of Physics 🌐 English ⚖ 807 KB

A CAD-oriented nonlinear model of SiC ME

✍ Siriex, D.; Noblanc, O.; Barataud, D.; Chartier, E.; Brylinski, C.; Quere, R. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 163 KB

Analytical model for I-V characteristics

✍ Mohammad, S.N.; Patil, M.B.; Chyi, J.I.; Gao, G.B.; Morkoc, H. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 823 KB

A 2D analytic field-dependent-mobility m

✍ Vaneeta Aggarwal; R.S Gupta 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 331 KB

A compact analytical I–V model of AlGaAs

✍ K Remashan; K Radhakrishnan 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 260 KB