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Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET

✍ Scribed by Polyakov, V.M.; Schwierz, F.

Book ID: 114538601
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 121 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.906444

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## Abstract We investigated low‐frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate. The heterostructure layers are grown without intentionally doping the barrier material and two‐dimensional gas appears at the i