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Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel

✍ Scribed by Mohammad, S.N.; Patil, M.B.; Chyi, J.I.; Gao, G.B.; Morkoc, H.

Book ID: 114536235
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 823 KB
Volume: 37
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.43795

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