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Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

✍ Scribed by Roschke, M.; Schwierz, F.

Book ID: 114538741
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 130 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.930664

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