𝔖 Bobbio Scriptorium
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Phonons in 3C-, 4H-, and 6H-SiC

✍ Scribed by H. Nienhaus; T.U. Kampen; W. Mönch

Book ID
116066600
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
343 KB
Volume
324
Category
Article
ISSN
0039-6028

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro