Implementation and characterization of the double-gate MOSFET using lateral solid-phase epitaxy
β Scribed by Haitao Liu; Zhibin Xiong; Sin, J.K.O.
- Book ID
- 114617101
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 404 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The device parameter dependence of temperature characteristics is evaluated for lateral power MOSFET having buried gates in the lower channel area and having trench gate/drains, produced by the solidβphase epitaxy method. The device parameters considered were the gate length and the nβd
## Abstract Recently we developed a model for symmetric doubleβgate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ10^14^ to 3Γ10^18^βcm^β3^. The model covers a wide range of technological parameters and includes short channe
Bacteria belonging to the __Burkholderia cepacia__ complex (Bcc) are significant pathogens in Cystic Fibrosis (CF) patients and are resistant to a plethora of antibiotics. In this context, microorganisms from Antarctica are interesting because they produce antimicrobial compounds inhibiting the grow