Device characteristics of the -D BiCMOS technology using selective epitaxial growth and lateral solid phase epitaxy

✍ Scribed by Haitao Liu; Kumar, M.; Sin, J.K.O.

• Book ID: 114616924
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 500 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2002.805615