Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid-phase epitaxy

✍ Scribed by Masahito Kodama; Takahide Sugiyama; Tutomu Uesugi

• Book ID: 102159771
• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 400 KB
• Volume: 84
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/ecjb.1029

✦ Synopsis

Abstract

The device parameter dependence of temperature characteristics is evaluated for lateral power MOSFET having buried gates in the lower channel area and having trench gate/drains, produced by the solid‐phase epitaxy method. The device parameters considered were the gate length and the n‐drift length. The temperature coefficient (change rate) of the threshold value depends on the gate length and this tendency tends to increase as the gate length increases. However, there was no dependence on the n‐drift length. In addition, the temperature coefficient of the specific on‐resistance depends on the n‐drift length, to a degree that increases as the n‐drift length increases. However, there was no dependence on the gate length. The above facts indicate that the temperature dependence of the device characteristics tends to decrease as the device size decreases. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(5): 55–61, 2001