Implanted dopant and associated damage p
β
Yuguo Li; Chunyu Tan; Jingping Zhang; Chengshan Xue; Honglei Xu; Pijun Liu; Lei
π
Article
π
2000
π
Elsevier Science
π
English
β 129 KB
## q Ε½ . The dopant and associated damage profiles in 2 MeV Er ion-implanted 100 Si were investigated using Rutherford Ε½ . backscattering spectroscopy and channelling RBSrC technology. A convolution program was used to extract the concentration distributions of Er from the measured RBS spectra. Wh