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Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

✍ Scribed by Gamarra, P.; Lacam, C.; Tordjman, M.; di Forte-Poisson, M.-A.

Book ID: 121898595
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 974 KB
Volume: 370
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.10.001

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