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Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

✍ Scribed by Ng, C.Y.; Chen, T.P.; Yang, M.; Yang, J.B.; Ding, L.; Li, C.M.; Du, A.; Trigg, A.

Book ID: 114618162
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 252 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.870281

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