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Impact of post-nitridation annealing on ultra-thin gate oxide performance

โœ Scribed by Yandong He; Ganggang Zhang


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
341 KB
Volume
256
Category
Article
ISSN
0169-4332

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โœ Yao Zhao; Mingzhen Xu; Changhua Tan ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 169 KB

Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress modes with the increase of reverse substrate bias. The variation of device degradation is characterized by monitoring the substrate current during stress. When the gate voltage is smaller than a criti