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Impact of Lateral Asymmetry of MOSFETs on the Gate–Drain Noise Correlation

✍ Scribed by Roy, A.S.; Enz, C.C.; Tao Chuan Lim; Danneville, F.

Book ID
114619465
Publisher
IEEE
Year
2008
Tongue
English
Weight
243 KB
Volume
55
Category
Article
ISSN
0018-9383

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Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs
✍ Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R. S. Gupta 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 310 KB

## Abstract A new device design laterally asymmetric channel gate stack (LACGAS) SGT is proposed, and its impact on device performance is examined. By using analytical modeling and numerical simulations, the novel features of this structure are studied, and it is demonstrated that LACGAS offers sup