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Modeling the Impact of the Trench Depth on the Gate–Drain Capacitance in Power MOSFETs

✍ Scribed by Alatise, Olayiwola; Parker-Allotey, Nii-Adotei; Jennings, Michael; Mawby, Phil; Kennedy, Ian; Petkos, George

Book ID
120201665
Publisher
IEEE
Year
2011
Tongue
English
Weight
530 KB
Volume
32
Category
Article
ISSN
0741-3106

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✍ Oana Moldovan; Ferney A. Chaves; David Jiménez; Jean-Pierre Raskin; Benjamin Iñi 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 251 KB

## Abstract This paper demonstrates the capability of our previously published undoped Double‐Gate (DG) MOSFET explicit and analytical compact model to also forecast the effect of the volume inversion (VI) on the intrinsic capacitances. For that purpose, we present simulation results for these capa