Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
✍ Scribed by Donghyun Jin; Jesús A. del Alamo
- Book ID
- 119326755
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 804 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0026-2714
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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we
## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote