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Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]

โœ Scribed by A. Kamgar; H. Vaidya; F. Baumann; S. Nakahara

Book ID
126687599
Publisher
IEEE
Year
2002
Tongue
English
Weight
197 KB
Volume
23
Category
Article
ISSN
0741-3106

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The effects of boron penetration on device performance and reliability of p+-poly PMOSFETs are investigated extensively with different RTA drive-in conditions. High drive-in temperature causes significant boron-penetration induced mobility degradation in P-MOSFETs, resulting degraded device performa