✦ LIBER ✦

The impact of deuterated CMOS processing on gate oxide reliability

✍ Scribed by Hof, A.J.; Hoekstra, E.; Kovalgin, A.Y.; van Schaijk, R.; Baks, W.M.; Schmitz, J.

Book ID: 114617950
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 205 KB
Volume: 52
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2005.854290

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of gate-poly grain structure on t

Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]

✍ A. Kamgar; H. Vaidya; F. Baumann; S. Nakahara 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 197 KB

Impact of MOSFET Gate-Oxide Reliability

Impact of MOSFET Gate-Oxide Reliability on CMOS Operational Amplifier in a 130-nm Low-Voltage Process

✍ Ming-Dou Ker, ; Jung-Sheng Chen, 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 632 KB

Impact of gate oxide nitridation process

Impact of gate oxide nitridation process on 1/f noise in 0.18 μm CMOS

✍ M Da Rold; E Simoen; S Mertens; M Schaekers; G Badenes; S Decoutere 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 287 KB

Impact of MOSFET gate oxide breakdown on

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

✍ Kaczer, B.; Degraeve, R.; Rasras, M.; Van de Mieroop, K.; Roussel, P.J.; Groesen 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 173 KB

The Effect of Gate Oxide Thickness on th

The Effect of Gate Oxide Thickness on the Radiation Hardness of Silicon-Gate CMOS

✍ Nordstrom, T. V.; Gibbon, C. F. 📂 Article 📅 1981 🏛 IEEE 🌐 English ⚖ 1016 KB

Impact of Ge content on the gate oxide r

Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

✍ Suresh Uppal; Mehdi Kanoun; John B. Varzgar; Sanatan Chattopadhyay; Sarah Olsen; 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 307 KB

In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had pol