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Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors

✍ Scribed by Nuttinck, S.; Scholten, A.J.; Tiemeijer, L.F.; Cubaynes, F.; Dachs, C.; Detcheverry, C.; Hijzen, E.A.

No coin nor oath required. For personal study only.

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