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[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Solution of 1-D Schrodinger and Poisson equations double gate SOI MOS

✍ Scribed by Fiegna, C.; Abramo, A.

Book ID: 120564185
Publisher: IEEE
Year: 1997
Tongue: English
Weight: 342 KB
Category: Article
ISBN-13: 9780780337756
DOI: 10.1109/SISPAD.1997.621344

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📜 SIMILAR VOLUMES

[IEEE SISPAD '97. 1997 International Con

[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Two-dimensional device simulator for cyclic bias application

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[IEEE SISPAD '97. 1997 International Con

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[IEEE SISPAD '97. 1997 International Con

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[IEEE SISPAD '97. 1997 International Con

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[IEEE SISPAD '97. 1997 International Con

[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - A characterization tool for current degradation effects of abnormally structured MOS transistors

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