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[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Application of TCAD to designing advanced DRAM and logic devices

✍ Scribed by Fukuda, I.; Nishi, K.

Book ID: 118272674
Publisher: IEEE
Year: 1997
Tongue: English
Weight: 394 KB
Volume: 0
Category: Article
ISBN-13: 9780780337756
DOI: 10.1109/sispad.1997.621325

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📜 SIMILAR VOLUMES

[IEEE SISPAD '97. 1997 International Con

[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Accurate models for CMOS scaling and gate delay in deep sub-micron regime

✍ Kai Chen, ; Chenming Hu, ; Peng Fang, ; Gupta, A.; Ming Ren Lin, ; Wollesen, D.L 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 289 KB

[IEEE SISPAD '97. 1997 International Con

[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - The role of boron segregation and transient enhanced diffusion on reverse short channel effect

✍ Machala, C.; Wise, R.; Mercer, D.; Chatterjee, A. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 292 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Theory and design of field-effect carbon nanotube transistors

✍ Pennington, G.; Goldsman, N. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 283 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - New developments and old problems in grid generation and adaptation for TCAD applications

✍ Fichtner, W.; Krause, J.; Schmithusen, B.; Villablanca, L. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 464 KB