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[IEEE Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) - Singapore (1999.07.9-1999.07.9)] Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) - An empirical breakdown model of the gate oxide under current stress

✍ Scribed by Jin-Ho Seo, ; Woo, J.C.S.

Book ID: 126716438
Publisher: IEEE
Year: 1999
Weight: 350 KB
Category: Article
ISBN-13: 9780780351875
DOI: 10.1109/IPFA.1999.791322

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