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[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Characteristics of AlGaN/GaN HEMT devices with SiN passivation

✍ Scribed by Jong-Soo Lee, ; Vescan, A.; Wieszt, A.; Dietrich, R.; Leier, H.; Young-Se Kwon,

Book ID: 121753483
Publisher: IEEE
Year: 2000
Weight: 297 KB
Edition: 2000
Category: Article
ISBN-13: 9780780364387
DOI: 10.1109/IEDM.2000.904336

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