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[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

✍ Scribed by Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.

Book ID: 115548969
Publisher: IEEE
Year: 2000
Weight: 349 KB
Edition: 2000
Volume: 0
Category: Article
ISBN-13: 9780780364387
DOI: 10.1109/iedm.2000.904289

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