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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation

โœ Scribed by Kesan, V.P.; Subbana, S.; Restle, P.J.; Tejwani, M.J.; Aitken, J.M.; Iyer, S.S.; Ott, J.A.


Book ID
120060381
Publisher
IEEE
Year
1991
Weight
301 KB
Category
Article
ISBN-13
9780780302433

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