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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - An isotropic best-fitting band model for electron and hole transport in silicon

✍ Scribed by Venturi, F.; Abramo, A.; Sangiorgi, E.; Higman, J.M.; Fiegna, C.; Ricco, B.

Book ID: 120297365
Publisher: IEEE
Year: 1991
Weight: 323 KB
Category: Article
ISBN-13: 9780780302433
DOI: 10.1109/IEDM.1991.235346

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