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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Channel hot-carrier induced oxide charge trapping in NMOSFET'S

✍ Scribed by Chen, W.; Ma, T.-P.

Book ID: 118118537
Publisher: IEEE
Year: 1991
Weight: 323 KB
Volume: 0
Category: Article
ISBN-13: 9780780302433
DOI: 10.1109/iedm.1991.235319

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