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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics

✍ Scribed by Kuriyama, H.; Kiyama, S.; Noguchi, S.; Kuwahara, T.; Ishida, S.; Nohda, T.; Sano, K.; Iwata, H.; Tsuda, S.; Nakano, S.

Book ID: 120182934
Publisher: IEEE
Year: 1991
Weight: 347 KB
Category: Article
ISBN-13: 9780780302433
DOI: 10.1109/IEDM.1991.235407

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