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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells

✍ Scribed by Bhavnagarwala, A.; Kosonocky, S.; Radens, C.; Stawiasz, K.; Mann, R.; Qiuyi Ye, ; Chin, K.

No coin nor oath required. For personal study only.

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