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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability

✍ Scribed by Tseng, H.-H.; Ramon, M.E.; Hebert, L.; Tobin, P.J.; Triyoso, D.; Grant, J.M.; Jiang, Z.X.; Roan, D.; Samavedam, S.B.; Gilmer, D.C.; Kalpat, S.; Hobbs, C.; Taylor, W.J.; Adetutu, O.; White, B.E.

Book ID: 127130442
Publisher: IEEE
Year: 2003
Weight: 230 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/iedm.2003.1269171

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