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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Highly performant double gate MOSFET realized with SON process

✍ Scribed by Harrison, S.; Coronel, P.; Leverd, F.; Cerutti, R.; Palla, R.; Delille, D.; Borel, S.; Jullian, S.; Pantel, R.; Descombes, S.; Dutartre, D.; Morand, Y.; Samson, M.P.; Lenoble, D.; Talbot, A.; Villaret, A.; Monfray, S.; Mazoyer, P.; Bustos, J.; Brut, H.; Cros, A.; Munteanu, D.; Autran, J.-L.; Skotnicki, T.

Book ID: 126680318
Publisher: IEEE
Year: 2003
Weight: 302 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269319

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