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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - SiGe:C BiCMOS technology with 3.6 ps gate delay

✍ Scribed by Rucker, H.; Heinemann, B.; Barth, R.; Bolze, D.; Drews, J.; Haak, U.; Hoppner, W.; Knoll, D.; Kopke, K.; Marschmeyer, S.; Richter, H.H.; Schley, P.; Schmidt, D.; Scholz, R.; Tillack, B.; Winkler, W.; Wulf, H.-E.; Yamamoto, Y.

Book ID: 120833212
Publisher: IEEE
Year: 2003
Weight: 230 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269180

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