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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Stable SRAM cell design for the 32 nm node and beyond

✍ Scribed by Chang, L.; Fried, D.M.; Hergenrother, J.; Sleight, J.W.; Dennard, R.H.; Montoye, R.K.; Sekaric, L.; McNab, S.J.; Topol, A.W.; Adams, C.D.; Guarini, K.W.; Haensch, W.

Book ID: 124165078
Publisher: IEEE
Year: 2005
Tongue: Japanese
Weight: 666 KB
Category: Article
ISBN-13: 9784900784000
DOI: 10.1109/.2005.1469239

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