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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

✍ Scribed by Kim, J.Y.; Oh, H.J.; Woo, D.S.; Lee, Y.S.; Kim, D.H.; Kim, S.E.; Ha, G.W.; Kim, H.J; Kang, N.J.; Park, J.M.; Hwang, Y.S.; Kim, D.I.; Park, B.J.; Huh, M.; Lee, B.H.; Kim, S.B.; Cho, M.H.; Jung, M.Y.; Kim, Y.I.; Jin, C.; Shin, D.W.; Shim, M.S.; Lee, C.S.; Lee, W.S.; Park, J.C.; Jin, G.Y.; Park, Y.J.; Kim, K.

Book ID: 118185049
Publisher: IEEE
Year: 2005
Tongue: Japanese
Weight: 838 KB
Volume: 0
Category: Article
ISBN-13: 9784900784000
DOI: 10.1109/.2005.1469201

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