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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm

✍ Scribed by Jahan, C.; Faynot, O.; Casse, M.; Ritzenthaler, R.; Brevard, L.; Tosti, L.; Garros, X.; Vizioz, C.; Allain, F.; Papon, A.M.; Dansas, H.; Martin, F.; Vinet, M.; Guillaumot, B.; Toffoli, A.; Giffard, B.; Deleonibus, S.

Book ID: 120078212
Publisher: IEEE
Year: 2005
Tongue: Japanese
Weight: 413 KB
Category: Article
ISBN-13: 9784900784000
DOI: 10.1109/.2005.1469233

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