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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

✍ Scribed by Collaert, N.; Demand, M.; Ferain, I.; Lisoni, J.; Singanamalla, R.; Zimmerman, P.; Yim, Y.S.; Schram, T.; Mannaert, G.; Goodwin, M.; Hooker, J.C.; Neuily, F.; Kim, M.C.; De Meyers, K.; De Gendt, S.; Boullart, W.; Jurczak, M.; Biesemans, S.

Book ID: 118063316
Publisher: IEEE
Year: 2005
Tongue: Japanese
Weight: 416 KB
Volume: 0
Category: Article
ISBN-13: 9784900784000
DOI: 10.1109/.2005.1469231

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