[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Highly reliable 50nm contact cell technology for 256Mb PRAM

✍ Scribed by Ahn, S.J.; Hwang, Y.N.; Song, Y.J.; Lee, S.H.; Lee, S.Y.; Park, J.H.; Jeong, C.W.; Ryoo, K.C.; Shin, J.M.; Park, J.H.; Fai, Y.; Oh, J.H.; Koh, G.H.; Jeong, G.T.; Joo, S.H.; Choi, S.H.; Son, Y.H.; Shin, J.C.; Kim, Y.T.; Jeong, H.S.; Kim, K.

• Book ID: 120027315
• Publisher: IEEE
• Year: 2005
• Tongue: Japanese
• Weight: 589 KB
• Category: Article
• ISBN-13: 9784900784000
• DOI: 10.1109/.2005.1469227