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[IEEE 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (8-12 July 2002)] Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) - Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers

✍ Scribed by Manhas, S.K.; De Souza, M.M.; Oates, A.S.; Chen, Y.

Book ID: 126737675
Publisher: IEEE
Year: 2002
Weight: 467 KB
Category: Article
ISBN-13: 9780780374164
DOI: 10.1109/IPFA.2002.1025668

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