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[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz

✍ Scribed by Medjdoub, F.; Tagro, Y.; Grimbert, B.; Ducatteau, D.; Rolland, N.; Silvestri, R.; Meneghini, M.; Zanoni, E.; Meneghesso, G.

Book ID: 121181295
Publisher: IEEE
Year: 2013
Weight: 568 KB
Category: Article
ISBN: 1479901113
DOI: 10.1109/IRPS.2013.6531985

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