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[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Challenges in the characterization and modeling of BTI induced variability in metal gate / High-k CMOS technologies

✍ Scribed by Kerber, A.; Nigam, T.

Book ID: 121197897
Publisher: IEEE
Year: 2013
Weight: 929 KB
Category: Article
ISBN: 1479901113
DOI: 10.1109/IRPS.2013.6531959

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