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[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Quantification of interface trap density above threshold voltage by gated hall method in InGaAs buried quantum well MOSFET

โœ Scribed by Chidambaram, Thenappan; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Veksler, Dmitry; Hill, Richard; Oktyabrsky, Serge


Book ID
121848616
Publisher
IEEE
Year
2013
Weight
288 KB
Category
Article
ISBN
1479908126

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