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[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - The worst stress condition of hot carrier degradation on high voltage LDMOSFET

✍ Scribed by Sarah Zhou Huayang, ; Yongliang Song, ; Zhuo Song, ; Lisa Yu Yanju, ; Atman Zhao Yong, ; Jeff Wu, ; Venson Chang, ; Kary Chien,

Book ID: 121744738
Publisher: IEEE
Year: 2013
Weight: 161 KB
Category: Article
ISBN: 1479912417
DOI: 10.1109/IPFA.2013.6599255

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