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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - 10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and Vth tunability through thin BOX

✍ Scribed by Saitoh, Masumi; Ota, Kensuke; Tanaka, Chika; Uchida, Ken; Numata, Toshinori

No coin nor oath required. For personal study only.

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