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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Efficiency of mechanical stressors in Planar FDSOI n and p MOSFETs down to 14nm gate length

✍ Scribed by Morvan, S.; Andrieu, F.; Casse, M.; Weber, O.; Xu, N.; Perreau, P.; Hartmann, J.M.; Barbe, J.C.; Mazurier, J.; Nguyen, P.; Fenouillet-Béranger, C.; Tabone, C.; Tosti, L.; Brevard, L.; Toffoli, A.; Allain, F.; Lafond, D.; Nguyen, B.Y.; Ghibaudo, G.; Boeuf, F.; Faynot, O.; Poiroux, T.

Book ID: 120068423
Publisher: IEEE
Year: 2012
Weight: 349 KB
Category: Article
ISBN: 1467308455
DOI: 10.1109/VLSIT.2012.6242486

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