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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Channel doping impact on FinFETs for 22nm and beyond

✍ Scribed by Lin, C.-H.; Kambhampati, R.; Miller, R. J.; Hook, T. B.; Bryant, A.; Haensch, W.; Oldiges, P.; Lauer, I.; Yamashita, T.; Basker, V.; Standaert, T.; Rim, K.; Leobandung, E.; Bu, H.; Khare, M.

Book ID: 118181634
Publisher: IEEE
Year: 2012
Weight: 221 KB
Category: Article
ISBN: 1467308455
DOI: 10.1109/vlsit.2012.6242438

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