[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

✍ Scribed by Auth, C.; Allen, C.; Blattner, A.; Bergstrom, D.; Brazier, M.; Bost, M.; Buehler, M.; Chikarmane, V.; Ghani, T.; Glassman, T.; Grover, R.; Han, W.; Hanken, D.; Hattendorf, M.; Hentges, P.; Heussner, R.; Hicks, J.; Ingerly, D.; Jain, P.; Jaloviar, S.; James, R.; Jones, D.; Jopling, J.; Joshi, S.; Kenyon, C.; Liu, H.; McFadden, R.; McIntyre, B.; Neirynck, J.; Parker, C.; Pipes, L.; Post, I.; Pradhan, S.; Prince, M.; Ramey, S.; Reynolds, T.; Roesler, J.; Sandford, J.; Seiple, J.; Smith, P.; Thomas, C.; Towner, D.; Troeger, T.; Weber, C.; Yashar, P.; Zawadzki, K.; Mistry, K.

• Book ID: 120203840
• Publisher: IEEE
• Year: 2012
• Weight: 808 KB
• Category: Article
• ISBN: 1467308455
• DOI: 10.1109/VLSIT.2012.6242496