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[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - Physical modeling of voltage-driven resistive switching in oxide RRAM

✍ Scribed by Ielmini, Daniele; Larentis, Stefano; Balatti, Simone

Book ID: 120836313
Publisher: IEEE
Year: 2012
Weight: 1007 KB
Category: Article
ISBN: 1467327514
DOI: 10.1109/IIRW.2012.6468905

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