[IEEE 2012 IEEE International Integrated
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[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - Optimized data assessment for hot carrier and Fowler-Nordheim stresses on thick MOS gate oxides with plasma process induced charging damage
โ Scribed by Martin, Andreas; Koten, Andreas; Schwerd, Markus
- Book ID
- 121219649
- Publisher
- IEEE
- Year
- 2012
- Weight
- 657 KB
- Category
- Article
- ISBN
- 1467327514
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๐ SIMILAR VOLUMES
[IEEE 2012 IEEE International Integrated
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Ielmini, Daniele; Larentis, Stefano; Balatti, Simone
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Article
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2012
๐
IEEE
โ 1007 KB